Анализ сдвига проходных характеристик МДП-транзистора
ISSN 0236-3933. Вестник МГТУ им. Н.Э. Баумана. Сер. Приборостроение. 2017. № 1
15
[9]
Arora N. MOSFET models for VLSI circuit simulation, theory and practice. Ed. by S. Sel-
berherr. New Jersey, World Scientific, 2007.
[10]
Taur Y., Ning T.H. Fundamentals of modern VLSI devices. New York, Cambridge Press,
2009.
[11]
Sze S., Ng K.K. Physics of semiconductor devices. New York, Wiley, 2006.
[12] Khare M., Wang X.W., Ma T.P. Transconductance in nitride-gate or oxynitride-gate
transistors.
IEEE Electron Device Letters
, 1999, vol. 20, no. 1, pp. 57–59.
Available at:
http://ieeexplore.ieee.org/document/737573DOI: 10.1109/55.737573
Drach V.E.
— Cand. Sci. (Eng.), Assoc. Professor of Electronic Equipment Design and Manufac-
ture Department, Bauman Moscow State Technical University, Kaluga Branch (Bazhenova ul. 2,
Kaluga, 248000 Russian Federation).
Please cite this article in English as:
Drach V.E. Analysis of MOSFET Transfer Characteristics Shear.
Vestn. Mosk. Gos. Tekh.
Univ. im. N.E. Baumana, Priborostr.
[Herald of the Bauman Moscow State Tech. Univ., In-
strum. Eng.], 2017, no. 1, pp. 4–15. DOI: 10.18698/0236-3933-2017-1-4-15