Анализ сдвига проходных характеристик МДП-транзистора

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В.Е. Драч
14 ISSN 0236-3933. Вестник МГТУ им. Н.Э. Баумана. Сер. Приборостроение. 2017. № 1
ANALYSIS OF MOSFET TRANSFER CHARACTERISTICS SHEAR
V.E. Drach
Bauman Moscow State Technical University, Kaluga Branch, Kaluga, Russian Federation
Abstract Keywords
The measurement of a MOSFET Id –Vg curves can be per-
formed repeatedly, but all the curves will be identical. But if a
MOSFET had been stressed (for example, by Fowler —
Nordheim injection), and then had a discharge phase, fur-
ther measurements will field different sets of curves, in other
words, there would be a shift of the Id – Vg curves. Recently, it
was shown that the MOSFET Id – V g shift was induced by
trapping/detrapping of slow border traps. However, further
discussion is needed to explain how these slow border traps
are filled with minority carriers during Id – Vg measurements.
For the detailed analysis, it is convenient to separate the
whole sweep into the subthreshold region and the linear
region and discuss each region separately
MOSFET, charge degradation,
Fowler — Nordheim injection,
linear region, subthreshold region
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