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Authors: Iovdalskiy V.A., Ganyushkina N.V., Panas A.I.	Published: 25.06.2023
Published in issue: #2(143)/2023
DOI: 10.18698/0236-3933-2023-2-20-38
Category: Instrument Engineering, Metrology, Information-Measuring Instruments and Systems \| Chapter: Electronic Component Base of Micro- and Nanoelectronics, Quantum Devices
Keywords: additional heat sink, Schottky-barrier gallium nitride field-effect transistor, power amplifier, temperature, weight and size characteristics, hybrid integrated circuit, Schottky-barrier composite two-tier field-effect transistor