Prospects of using the Schottky-Barrier Composite Two-Tier FETs in a HIC of the Microwave Power Amplifiers

Abstract

The paper demonstrates relevance and prospects of using the Schottky-barrier composite two-tier FETs based on the GaN crystals in the previously developed hybrid integrated circuit design, as well as the possibility to increase power dissipation up to 200 W with using one pair of crystals and to 250 W with using the two pairs. Thermal calculation results are presented proving the prospects of using the proposed hybrid integrated circuit design. Crystals of the two types GaAs and GaN are compared. Efficiency and prospects for using GaN crystals and Schottky barrier composite two-tier field-effect transistors in a hybrid integrated circuit of the microwave power amplifier could significantly improve its weight and size characteristics. Advent and use of the Schottky-barrier field-effect transistors based on the GaN crystals with the power of up to 100 W and more was temporarily solving the problem of increasing the power and improving the weight and size characteristics of the microwave amplifiers. When comparing maximum temperatures on the transistor crystal at the released power of 1 W, it was found that an increase in the thermal conductivity of the additional heat sink contributed to maximum temperature displacement from the upper crystals to the lowers and changed the heat flow direction. GaN crystals use increased the power level over the entire range of thermal conductivity of the additional heat sink materials 500--2000 W/(m · K), and the power ratio with an increase in the thermal conductivity of the additional heat sink was approximately equal to two. Prospects of using the proposed design of a hybrid integrated circuit of power amplifiers was justified

Please cite this article in English as:

Iovdalskiy V.A., Ganyushkina N.A., Panas A.I. Prospects of using the Schottky-barrier composite two-tier FETs in a HIC of the microwave power amplifiers. Herald of the Bauman Moscow State Technical University, Series Instrument Engineering, 2023, no. 2 (143), pp. 20--38 (in Russ.). DOI: https://doi.org/10.18698/0236-3933-2023-2-20-38

References

[1] Sannikov E.S., Kobyakin V.P., Eliseev V.A., et al. Monolithic two-watt X-band power amplifier. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2003, no. 1, pp. 103--104 (in Russ.).

[2] Iovdalskiy V.A., Pchelin V.A., Lapin V.G., et al. Moshchnaya gibridnaya integralnaya skhema SVCh-diapazona [High-power hybrid microwave integrated circuit]. Patent RU 2298255. Appl. 12.08.2005, publ. 27.04.2007 (in Russ.).

[3] Iovdalskiy V.A., Pchelin V.A. Vyvodnaya ramka dlya SVCh i KVCh poluprovodnikovogo pribora [Terminal strip for microwave and extremely-high frequency semiconductor devices]. Patent RU 2191492. Appl. 17.04.2000, publ. 20.10.2002 (in Russ.).

[4] Iovdalskiy V.A. A new concept for crystal PTS power stacking in GIS microwave power amplifiers. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2006, no. 1, pp. 44--51 (in Russ.).

[5] Iovdalskiy V.A., Lapin V.G., Pchelin V.A. Double-level transistor assembling for microwave power amplifiers. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika

[6] Iovdalskiy V.A., Pchelin V.A., Lapin V.G. A composed double-deck transistor for microwave power amplifiers. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2010, no. 4, pp. 65--71 (in Russ.).

[7] Zadnepryanaya N.I. Razrabotka i osvoenie seriynogo proizvodstva dvukh liter sverkhvysokochastotnykh usiliteley moshchnosti s polosami ne bolee 1 oktavy v diapazone chastot 8--12 GGts s vykhodnoy moshchnostyu 4 i 12 Vt s povyshennym koeffitsientom poleznogo deystviya do 35 % [Development and mastering of serial production of two liters of ultra-high-frequency power amplifiers with bands not exceeding 1 octave in frequency range 8--12 GHz with output power of 4 and 12 W and increased efficiency up to 35 %]. Moscow, Istok Publ., 2018.

[8] Iovdalskiy V.A., Pchelin V.A., Gavrilov I.A. Tverdotelnye usiliteli moshchnosti SVCh-diapazona [Solid-state microwave power amplifiers]. Moscow, Kurs Publ., 2020.

[9] Borisov A.A., ed. Priemoperedayushchie moduli AFAR SVCh-diapazona [Micro-wave ADF transceiver modules]. Moscow, Kurs Publ., 2022.

[10] Danilin N.S., Bulaev I.Yu., Brazhnikov M.A., et al. Modernization of space electron infrastructure based on alliance of the customized application systems of the chips in the package. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2015, no. 4, pp. 41--49 (in Russ.).

[11] Dalinger A.G., Malyshchik V.M., Iovdalskiy V.A. Upgrading the structure of microwave active phased array transmitter-receiver module. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2017, no. 2, pp. 75--83 (in Russ.).

[12] Borisov A.A., Burobin V.A. Obzor sovremennykh tekhnologiy geterointegratsii mnogokomponentnykh poluprovodnikovykh soedineniy A3V5 i kremnievykh KMOP dlya vnedreniya na rynki oboronnoy i grazhdanskoy produktsii [Review of modern technologies of multicomponent A3V5 and silicon CMOS semiconductors heterointegration for implementation in defense and civil markets]. Moscow, Tekhnosfera Publ., 2020.

[13] Strategy analytics reports defense, 5G to propel RF GaN market past $ 1 B. Microwave J., August 1, 2018. Available at: https://www.microwavejournal.com/articles/30821-strategy-analytics-reports-defense-5g-to-propel-rf-gan-market-past-1b

[14] Iovdalskiy V.A., Ganyushkina N.V., Morgunov V.G., et al. The thermal analysis of work of a power hic with integrated heat sink from the chips of semiconductor devices. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2012, no. 2, pp. 57--74 (in Russ.).

[15] Iovdalskiy V.A., Pchelin V.A., Gerasimenko S.V. The efficiency of using two-chip composite field-effect Schottky transistors in microwave range power amplifier. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2014, no. 2, pp. 33--38 (in Russ.).

[16] Iovdalskiy V.A., Manchenko L.V., Davronov S.K. The improvement of flat leads geometry of microwave hic component chips. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2015, no. 4, pp. 67--70 (in Russ.).

[17] Iovdalskiy V.A., Dudinov K.V., Davronov S.K. A lead frame for a microwave multichip semiconductor device. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2015, no. 4, pp. 70--73 (in Russ.).

[18] Iovdalskiy V.A., Lapin V.G., Pchelin V.A., et al. Multichip composite Shottky-gate FET for microwave hic power amplifiers. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika [Electronic Engineering. Ser. 1. Microwave Engineering], 2015, no. 4, pp. 74--76 (in Russ.).