A New Design of the Microwave Power Amplifier

Abstract

The article presents an innovative design of a hybrid integrated circuit of a microwave power amplifier, characterized by a two-tier arrangement of crystals of monolithic integrated circuits of power amplifiers with direct contact of the front sides of the crystals with each other. The single-function beam terminals of the crystals are connected to each other and to the input and output conductors of the multilayer printed circuit board. The heat sink from the upper crystal of a monolithic integrated circuit of a power amplifier in a two-tier hybrid integrated circuit is carried out through a plate made of a highly heat-conducting material, the edges of which protrude beyond the crystal and connect to the heat-removing projections of the base. The purpose of creating a new design of a hybrid integrated circuit of a power amplifier is to improve the electrical and mass-dimensional characteristics of the device. Calculations of the thermal characteristics of crystals of monolithic integrated circuits made of gallium arsenide and gallium nitride at a constant power of 10 W allowed us to establish that effective heat dissipation is provided, which contributes to achieving the same heating temperature of both crystals. Calculations were performed for various values of the thermal conductivity of the heat sink plate in the range from 250 to 2000 W/(m • K) and plate thickness from 0.2 to 0.5 mm. A comparison of the electrical characteristics of the two-tier design of a hybrid integrated circuit of a power amplifier with similar characteristics of a single-tier circuit confirms the improvement in electrical characteristics. The two-tier design allows you to significantly reduce the area of the circuit by 36 % with a slight increase in height by 0.3 mm, which indicates an improvement in weight and size characteristics. These results confirm the prospects of the proposed design of a microwave power amplifier

Please cite this article in English as:

Iovdalskiy V.A., Ganyushkina N.V., Panas A.I., et al. A new design of the micro-wave power amplifier. Herald of the Bauman Moscow State Technical University, Series Instrument Engineering, 2024, no. 4 (149), pp. 41--55 (in Russ.). EDN: VDATYD

References

[1] Sechi F., Bujatti M. Solid-state microwave high-power amplifiers. Artech House Publishers, 2009.

[2] Isaev S.A., Kishchinskiy A.A., Loginov G.L., et al. We do what we do best. Elektronika: Nauka. tekhnologiya. biznes [Electronics: Science, Technology, Business], 2009, no. 4, pp. 10--16 (in Russ.). EDN: CAMJH

[3] Bochkarev D.V., Nikitin D.V., Kishchinskiy A.A., et al. [Broadband amplifier module in the range of 2-4 GHz with output power]. Mater. 19-y Krymskoy konf. "KryMiKo". T. 1 [Proc. 19th Crimea Conf. "KryMiKo". Vol. 1]. Sevastopol, SevGU, 2009, pp. 94--95 (in Russ.). EDN: XXSXNT

[4] Kishchinskiy A.A. Wideband microwave transistor amplifiers: generation changes. Elektronika: Nauka, tekhnologiya, biznes [Electronics: Science, Technology, Business], 2010, no. 2, pp. 60--67 (in Russ.). EDN: OCAOAJ

[5] Roberg M., Zhang J., Flynt R., et al. A 50 W CW 1--6 GHz GaN MMIC power amplifier module with greater than 30 % power added efficiency. IEEE/MTT-S IMS, 2022, pp. 426--428. DOI: https://doi.org/10.1109/IMS37962.2022.9865433

[6] Garmash S.V., Kishchinskiy A.A., Gevorkyan V.M. Two-channel waveguide power combiner in X-band wavelengths. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika, 2016, no. 3, pp. 81--87 (in Russ.). EDN: UYSQHW

[7] Armagan G., Burak O.Y., Оmer C., et al. X-band GaN based MMIC power amplifier with 36.5 dBm P1-dB for space applications. Proc. EuMC, 2018, pp. 234--236. DOI: https://doi.org/10.23919/EuMC.2018.8541703

[8] Memioglu O., Karakuzulu O., Alper Gundel A., et al. Design and implementation of an encapsulated GaN X-band power amplifier family. Proc. EuMIC, 2018, pp. 89--92. DOI: https://doi.org/10.23919/EuMIC.2018.8539902

[9] Kazan O., Kocer N., Civi O. An X-band robust GaN low-noise amplifier MMIC with sub 2 dB noise figure. Proc. EuMIC, 2018, pp. 1313--1316. DOI: https://doi.org/10.23919/EuMIC.2018.8539909

[10] Iovdalskiy V.A., Pchelin V.A., Lapin V.G., et al. Moshchnaya gibridnaya integralnaya skhema SVCh-diapazona [High-power hybrid microwave integrated circuit]. Patent RU 2298255. Appl. 12.08.2005, publ. 27.04.2007 (in Russ.).

[11] Iovdalskiy V.A. A new concept of PTC crystal power addition in GIS microwave power amplifiers. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika, 2006, no. 1, pp. 44--51 (in Russ.).

[12] Iovdalskiy V.A., Lapin V.G., Pchelin V.A. Double-level transistor assembling for microwave power amplifiers. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika, 2009, no. 4, pp. 38--41 (in Russ.). EDN: MNHFYN

[13] Iovdalskiy V.A., Pchelin V.G., Lapin V.G., et al. The improvement of HIC output stage characteristics of a microwave power amplifier. Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika, 2015, no. 4, pp. 63--67 (in Russ.). EDN: XILKAH

[14] Iovdalskiy V.A., Manchenko L.V. Davronov S.K. The improvement of flat leads geometry of microwave hic component chips. Elektronnaya tekhnika. Ser. 1. SVCh- tekh-nika, 2015, no. 4, pp. 67--69 (in Russ.). EDN: XILKBB

[15] Perm J., Moore G. Review the basic of VVIC design. Microwaves and RF, 2001, no. 6, pp. 55--70.

[16] Sannikov E.S., Kobyakin V.P., Eliseev V.A., et al. Monolithic dual watt X-power frequency amplifier. Elektronnaya tekhnika. Ser. 1. SVCh--tekhnika, 2003, no. 1, pp. 103--104 (in Russ.).

[17] Iovdalskiy V.A., Dudinov K.V., Ganyushkina N.V. Moshchnaya gibridnaya integralnaya skhema SVCh-diapazona [High-power microwave hybrid integrated circuit]. Patent RU 2817537. Appl. 19.12.2023, publ. 16.04.2024 (in Russ.).

[18] Alyamovskiy A.A. Solid Works Simulation. Inzhenernyy analiz dlya professionalov: zadachi, metody, rekomendatsii [SOLIDWORKS simulation. Engineering analysis for professionals. Tasks, methods, recommendations]. Moscow, DMK Press Publ., 2014.

[19] Alyamovskiy A.A. SOLIDWORKS simulation i FloEFD. Praktika, metodologiya, ideologiya [SOLIDWORKS simulation and FloEFD. Practice, methodology, ideology]. Moscow, DMK Press Publ., 2019.

[20] Vasilyev A., Danilin V., Zhukova T. Semiconductor materials and devices new generation. Elektronika: nauka, tekhnologiya, biznes [Electronics: Science, Technology, Business], 2007, no. 4, pp. 68--76 (in Russ.). EDN: NXAPXF