Advanced Semiconductor Lasers with Radiated Power up to 200 mWt for Satellite-to-Satellite Optical Communication Links
| Authors: Kryukova I.V., Marmalyuk A.A., Matveyenko Ye.V., Popovichev V.V., Simakov V.A., Chelny A.A., Chukovskij N.N. | Published: 20.11.2014 |
| Published in issue: #3(48)/2002 | |
| DOI: | |
| Category: Laser and opto-electronic systems | |
| Keywords: | |
A comprehensive study of radiation characteristics was conducted both in the continuous and pulse mode for the powerful new-generation laser radiators based on heterostructures with quantum-sized layers. The characteristics under study included power-generating, spatial, spectral and modulation parameters. The consistent development of the Metal-Organic-Combination technology of the heterostructure growth allowed increasing the radiated power 3 times up to 200 mWt in single-mode laser radiators based on GaAlAs with the wave band 0,8-0,85 μm and InGaAs with the wave length 0.98 μm. The study of radiation parameters in the pulse-and-code mode with the modulation frequency up to 155 MHz has shown that the developed lasers can be used for the data channel transmitter operating with the rate 100 Mbps in the apparatus of the satellite-to-satellite optical communication links.
