Direct Process Control of Thin Film Synthesis During Production of Very-Large-Scale Integrated Circuits

The article deals with a method for direct process control of electrophysical parameters of thin films, used in production of very-large-scale integrated circuits. We present an algorithm for implementing this method so as to achieve minimum deviations in film parameters, which makes it possible to produce these circuits according to more advanced design standards

References

[1] Kornyukhin A.V., Kurdyukov S.A., Lantsev A.N., Starilov M.V. Photomasks design features for nanosized semiconductor VLSI. Nanomaterialy i nanostruktury — XXI vek [Nanomaterials and Nanostructures — XXI Century], 2012, no. 2, pp. 26–35 (in Russ.).

[2] Amirkhanov A.V., Volkov S.I., Glushko A.A., Zinchenko L.A., Makarchuk V.V., Shakhnov V.A. Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors. Russian Microelectronics, 2016, vol. 45, no. 4, pp. 237–241. DOI: 10.1134/S106373971604003X Available at: https://link.springer.com/article/10.1134/S106373971604003X

[3] Bespalov V.A., Dyakonov V.M., Korshunov A.B. Design techniques for static power reducing of nanometer VLSI. Uspekhi sovremennoy radioelektroniki [Achievements of Modern Radioelectronics], 2012, no. 10, pp. 36–42 (in Russ.).

[4] Kachemtsev A.N., Kiselev V.K., Smolin V.K. Technological principles for production of perspective nonvolatile memory. Nano- i mikrosistemnaya tekhnika [Nano- and Microsystems Technology], 2015, no. 7, pp. 13–26 (in Russ.).

[5] Panfilov Yu.V. Thin films deposition in vacuum. Tekhnologii v elektronnoy promyshlennosti [Technologies in Electronic Industry], 2007, no. 3, pp. 76–80 (in Russ.).

[6] Oura K., Lifshits V.G., Saranin A.A., Zotov A.V., Katayama M. Vvedenie v fiziku poverkhnosti [Introduction to surface physics]. Moscow, Nauka Publ., 2006. 490 p.

[7] Tumarkin A.V., Popov A.Yu., Zlygostov M.V., Razumov S.V., Gagarin A.G. Effect of working gas pressure on the component composition and properties of thin films of barium-strontium titanate. Elektronika i mikroelektronika SVCh, 2016, vol. 2, no. 1, pp. 124–128 (in Russ.).

[8] Obraztsov D.V., Gumbin V.V., Shelokhvostov V.P., Chernyshov V.N., Makarchuk M.V. Sposob sinteza nanostrukturnoy plenki na izdelii i ustroystvo dlya ego realizatsii [A method for synthesizing nanostructured film on the product and device for its realization]. Patent RF 2466207. Appl. 23.12.2010, publ. 10.11.2012.

[9] Obraztsov D.V., Chernyshov V.N., Shelokhvostov V.P. Method and system for active process control of the synthesis of nanoobjects. Nanoinzheneriya [Nano Ingineering], 2015, no. 8, pp. 27–32 (in Russ.).

[10] Kilimnik A.B., Nikiforova E.Y. Electrochemical behavior of nickel and its oxides in con-centrated sodium hydroxide solutions. Russian Journal of Electrochemistry, 2013, vol. 49, no. 12, pp. 1122–1126. DOI:10.1134/S1023193513120033 Available at: https://link.springer.com/article/10.1134/S1023193513120033

[11] Platenkin A.V., Shelokhvostov V.P., Barshutin S.N. Working out of the device of influencing by electromagnetic fields on a process plasmachemical synthesis of nanoobjects. Vestnik Tambovskogo universiteta. Ser. Estestvennye i tekhnicheskie nauki [Tambov University Reports. Series Natural and Technical Sciences], 2010, vol. 15, no. 1, pp. 240–241 (in Russ.).