Analysis of MOSFET Transfer Characteristics Shear

The measurement of a MOSFET Id -Vg curves can be performed repeatedly, but all the curves will be identical. But if a MOSFET had been stressed (for example, by Fowler - Nordheim injection), and then had a discharge phase, further measurements will field different sets of curves, in other words, there would be a shift of the Id - Vg curves. Recently, it was shown that the MOSFET Id - Vg shift was induced by trapping/detrapping of slow border traps. However, further discussion is needed to explain how these slow border traps are filled with minority carriers during Id - Vg measurements. For the detailed analysis, it is convenient to separate the whole sweep into the subthreshold region and the linear region and discuss each region separately.

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